現(xiàn)貨供應(yīng) 開關(guān)二管B

High-speed double diode B
FEATUR
· all plastic D package
· High switching speed: max. 4 ns
· Continuous reverse voltage:
max. 75 V
· Repetitive peak reverse voltage:
max. 85 V
· Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
· High-speed switching in thick and
thin-film circuits.
DCRIPTION
The B consists of two
high-speed switching diod
conneed in seri, fabricated in
planar technology, and encapsulated
in the all SOT23 plastic D
package.
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
PINNING
TYPE NUER
MARKING
CODE(1)
B A7*
PIN DCRIPTION
1 anode
2 cathode
3 common conneion
Fig.1 Simplified outline (SOT23) and syol.
handbook, halfpa2ge 1
3 MAM232
2 1
3
LIMITING VALU
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage - 85 V
VR continuous reverse voltage - 75 V
IF continuous forward current single diode loaded; see Fig.2;
note 1
- 215 mA
double diode loaded; see Fig.2;
note 1
- 125 mA
IFRM repetitive peak forward current - 450 mA
IF non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 ms - 4 A
t = 1 ms - 1 A
t = 1 s - 0.5 A
Ptot total power dissipation Ta = 25 °C; note 1 - 250 mW
Tstg storage temperature -65 +150 °C
Tj junion temperature - 150 °